Federal Awards · Award

REQUIREMENT TO PROCURE A LARGE QUANTITY OF CUSTOM GALLIUM NITRIDE (GAN) SCHOTTKY DIODES WITH CUTTING EDGE C…

Award details are derived from public USAspending.gov records. Not a bid recommendation.

Award details

Award ID
80GRC025P0002
Contractor
Sub-agency / office
National Aeronautics and Space Administration
Award amount
$273,770
Period of performance
Oct 1, 2025 – Sep 30, 2026
NAICS
334413 — Semiconductor and Related Device Manufacturing
PSC
PSC 5961
Place of performance
MA

Public award description

REQUIREMENT TO PROCURE A LARGE QUANTITY OF CUSTOM GALLIUM NITRIDE (GAN) SCHOTTKY DIODES WITH CUTTING EDGE CAPABILITIES ONLY POSSIBLE TO BE MADE AT THE MOST ADVANCED GAN FOUNDRIES.

Source: USAspending.gov

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