DRY ETCHING OF COMBINED GALLIUM NITRIDE EPITAXIAL LAYER AND SILICON CARBIDE SUBSTRATE
Award details are derived from public USAspending.gov records. Not a bid recommendation.
Award details
- Award ID
- 80NSSC26P1008
- Contractor
- Awarding agency
- National Aeronautics and Space Administration
- Sub-agency / office
- National Aeronautics and Space Administration
- Award amount
- $85,000
- Period of performance
- Jul 15, 2026 – Aug 19, 2026
- NAICS
- 334413 — Semiconductor and Related Device Manufacturing
- Place of performance
- OH
Public award description
DRY ETCHING OF COMBINED GALLIUM NITRIDE EPITAXIAL LAYER AND SILICON CARBIDE SUBSTRATE
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- Agency: National Aeronautics and Space Administration
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