Federal Awards · FINWAVE SEMICONDUCTOR, INC. · Award

IGF::CL::IGF GALLIUM NITRIDE(GAN)- BASED HIGH FREQUENCY SWITCH/TRANSISTOR FOR L-BAND RF POWER AMPLIFIER APP…

Award details are derived from public USAspending.gov records. Not a bid recommendation.

Award details

Award ID: N0001415C0144
Contractor: FINWAVE SEMICONDUCTOR, INC.
Awarding agency: Department of Defense
Sub-agency / office: Department of the Navy
Award amount: $528,547
Period of performance: Dec 18, 2017 – Dec 15, 2017
NAICS: 541712 — Research and Development in the Physical, Engineering, and Life Sciences
PSC: PSC AD92

IGF::CL::IGF GALLIUM NITRIDE(GAN)- BASED HIGH FREQUENCY SWITCH/TRANSISTOR FOR L-BAND RF POWER AMPLIFIER APPLICATION

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