ETCHING OF WAFERS GRC POINT OF CONTACT: ROBERT OKOJIE PHONE (216) 433-6522 UUPIC: 036255646 FABRICATE TWO 2…
Award details are derived from public USAspending.gov records. Not a bid recommendation.
Award details
- Award ID
- NNC08VD59P
- Contractor
- Awarding agency
- National Aeronautics and Space Administration
- Sub-agency / office
- National Aeronautics and Space Administration
- Award amount
- $0
- Period of performance
- Mar 3, 2008 – Apr 18, 2008
- NAICS
- 334513 — Instruments and Related Products Manufacturing for Measuring, Displaying, and Controlling Industrial Process Variables
- PSC
- PSC AB91
- Place of performance
- OH
Public award description
ETCHING OF WAFERS GRC POINT OF CONTACT: ROBERT OKOJIE PHONE (216) 433-6522 UUPIC: 036255646 FABRICATE TWO 2-INCH SILICON CARBIDE (SIC) WAFERS BY DEEP REACTIVE ION ETCHING (DRIE). STATEMENT OF WORK AND SPECIFICATIONS ETCH DEPTH THE ETCH DEPTH SHALL BE 200 MICRONS, WITH DEPTH ERROR FOR BOTH WAFERS TO BE 10 MICRONS. SURFACE ROUGHNESS AFTER ETCH SURFACE ROUGHNESS TO BE LESS THAN 0.5 MICRONS. NO "GRASSY" RESIDUE (MICRO-MASKING) ON THE ETCHED SURFACE. ETCH TRENCH NOT TO BE MORE THAN 5 MICRONS DEEP. DELIVERY TIME DELIVERY TO NASA SHALL BE NOT LATER THAN ONE MONTH UPON RECEIPT OF THE WAFERS.
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