ION ETCHING OF WAFERS. DEEP REACTIVE ION ETCHING OF CORRUGATIONS IN SILICON STATEMENT OF WORK AND SPECIFICA…
Award details are derived from public USAspending.gov records. Not a bid recommendation.
Award details
- Award ID
- NNC08VD71P
- Contractor
- Awarding agency
- National Aeronautics and Space Administration
- Sub-agency / office
- National Aeronautics and Space Administration
- Award amount
- $0
- Period of performance
- Apr 14, 2008 – May 30, 2008
- NAICS
- 334519 — Other Measuring and Controlling Device Manufacturing
- PSC
- PSC AB96
- Place of performance
- MI
Public award description
ION ETCHING OF WAFERS. DEEP REACTIVE ION ETCHING OF CORRUGATIONS IN SILICON STATEMENT OF WORK AND SPECIFICATIONS IT IS REQUIRED TO ETCH 400 MICRONS DEEP CONCENTRIC GROVES IN SILICON BY USING DEEP REACTIVE ION ETCHING (DRIE). NASA GLENN SHALL PROVIDE FIVE SILICON WAFERS OF APPROXIMATELY 500 MICRONS THICK, AND ONE MASK FOR PHOTOLITHOGRAPHY. MINIMUM FEATURE SIZE IS APPROX. 50 MICRONS. FEATURE DIMENSIONAL TOLERANCE SHALL BE NO MORE THAN 10%. ASPECT RATIO SHALL BE BETTER THAN 10 TO 1. TURN-AROUND TIME FOR COMPLETED WAFERS SHALL BE THREE WEEKS FROM RECEIPT OF PURCHASE ORDER, WAFERS AND MASKS.
Find out who's winning similar federal contracts
Discover comparable awards, related contractors, and agency purchasing history.