INGAP HBT LIFT-OFF FOR HIGH EFFICIENCY L-BAND T/R MODULE THIS PROPOSAL ADDRESSES THE NEED FOR THE DEVELOPME…
Award details are derived from public USAspending.gov records. Not a bid recommendation.
Award details
- Award ID
- NNX09CD87P
- Contractor
- Awarding agency
- National Aeronautics and Space Administration
- Sub-agency / office
- National Aeronautics and Space Administration
- Award amount
- $0
- Period of performance
- Jan 22, 2009 – Jul 22, 2009
- NAICS
- 541712 — Research and Development in the Physical, Engineering, and Life Sciences
- PSC
- PSC AR11
- Place of performance
- IL
Public award description
INGAP HBT LIFT-OFF FOR HIGH EFFICIENCY L-BAND T/R MODULE THIS PROPOSAL ADDRESSES THE NEED FOR THE DEVELOPMENT OF HIGHER EFFICIENCY POWER AMPLIFIERS AT L-BAND USING GAAS HBT (HETEROJUNCTION BIPOLAR TRANSISTORS) FOR PULSED MODE RADAR APPLICATIONS. IN THIS PROPOSAL WE OFFER A NOVEL APPROACH FOR SIGNIFCANTLY IMPROVING THE THERMAL CHARACTERISTICS OF HIGH POWER GAAS BASED HBTS. THIS WORK WILL BE ACCOMPLISHED BY THE DEVELOPMENT OF A HIGH-YIELD, 4-INCH EPITAXIAL LIFTOFF (ELO) TECHNOLOGY ACCOMPANIED BY THE BONDING OF THE GAAS DEVICE WAFER ONTO A DIAMOND SUBSTRATE. THE POWER ADDED EFFICIENCY IS EXPECTED TO BE AT LEAST 65% WITH AN IMPROVEMENT IN POWER DENSITY BY 50%.
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