GAN-BASED, LOW-VOLTAGE AVALANCHE PHOTODIODES FOR ROBUST AND COMPACT UV IMAGERS THIS PHASE I SBIR PROGRAM IS…
Award details are derived from public USAspending.gov records. Not a bid recommendation.
Award details
- Award ID
- NNX09CD92P
- Contractor
- Awarding agency
- National Aeronautics and Space Administration
- Sub-agency / office
- National Aeronautics and Space Administration
- Award amount
- $0
- Period of performance
- Jan 22, 2009 – Jul 22, 2009
- NAICS
- 541712 — Research and Development in the Physical, Engineering, and Life Sciences
- PSC
- PSC AR11
- Place of performance
- MN
Public award description
GAN-BASED, LOW-VOLTAGE AVALANCHE PHOTODIODES FOR ROBUST AND COMPACT UV IMAGERS THIS PHASE I SBIR PROGRAM IS DIRECTED TOWARD THE DEVELOPMENT OF A NOVEL LOW-VOLTAGE (~10V) ALGAN-BASED MULTI-QUANTUM WELL (MQW) AVALANCHE PHOTODIODE (APD) ON LOW-COST SUBSTRATES. THE HIGH-GAIN, HIGH-SPEED AND LOW-NOISE OPERATION OF THE PROPOSED DEVICE ALLOW THE REPLACEMENT OF BULKIER AND MORE FRAGILE PHOTOMULTIPLIER TUBES (PMTS) FOR MANY UV PHOTON-COUNTING AND IMAGING APPLICATIONS. IN PARTICULAR, REDUCTION IN SIZE AND WEIGHT IN ADDITION TO IMPROVEMENTS IN RELIABILITY AND RUGGEDNESS COMPARED TO PMTS, MAKE THIS TECHNOLOGY VERY SUITABLE FOR SOME OF THE NASA'S PLANNED SPACE MISSIONS AS WELL AS OTHER CIVILIAN AND DEFENSE APPLICATIONS THAT REQUIRE HIGH-SENSITIVITY, SOLAR-BLIND UV DETECTION.
Find out who's winning similar federal contracts
Discover comparable awards, related contractors, and agency purchasing history.