FIR DETECTORS/CAMERAS BASED ON GAN AND SI FIELD-EFFECT DEVICES SETI PROPOSES TO DEVELOP GAN AND SI BASED MU…
Award details are derived from public USAspending.gov records. Not a bid recommendation.
Award details
- Award ID
- NNX09CF26P
- Contractor
- Awarding agency
- National Aeronautics and Space Administration
- Sub-agency / office
- National Aeronautics and Space Administration
- Award amount
- $0
- Period of performance
- Jan 22, 2009 – Jul 22, 2009
- NAICS
- 541712 — Research and Development in the Physical, Engineering, and Life Sciences
- PSC
- PSC AR11
- Place of performance
- SC
Public award description
FIR DETECTORS/CAMERAS BASED ON GAN AND SI FIELD-EFFECT DEVICES SETI PROPOSES TO DEVELOP GAN AND SI BASED MULTICOLOR FIR/THZ CAMERAS WITH DETECTOR ELEMENTS AND READOUT, SIGNAL PROCESSING ELECTRONICS INTEGRATED ON A SINGLE CHIP. THE ACTIVE DETECTOR ELEMENTS WILL BE SUBMICRON GATED CHANNELS WITH 2 DIMENSIONAL ELECTRON GAS (2DEG). THE DEVICES WITH GATED 2DEG (COMMONLY KNOWN AS FIELD-EFFECT TRANSISTORS) RESPOND TO THE INCOMING FIR RADIATION DUE TO THE RECTIFICATION OF RADIATION INDUCED OSCILLATIONS OF ELECTRON DENSITY (ELECTRON PLASMA). PHASE I OF THE PROJECT WILL BE DEVOTED TO THE DEVELOPMENT, DESIGN, AND CHARACTERIZATION OF THE SINGLE PIXEL, CONSISTING OF AN ARRAY OF FIELD-EFFECT TRANSISTORS, TARGETING AT RESPONSIVITY INCREASE OF 100 TIMES, AND DEMONSTRATING THE TECHNICAL FEASIBILITY OF 10^10 CM HZ^0.5/W DETECTIVITY.
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