SPACE MICRO PROPOSES TO BUILD A RADIATION HARDENED BY DESIGN (RHBD) FLASH MEMORY, USING A MODIFIED VERSION…

Public award description

SPACE MICRO PROPOSES TO BUILD A RADIATION HARDENED BY DESIGN (RHBD) FLASH MEMORY, USING A MODIFIED VERSION OF OUR RH-EDRAM MEMORY CONTROLLER TO SOLVE ALL THE SINGLE EVENT EFFECTS ISSUES (SEU, SEFI AND MULTIPLE BIT ERRORS) USING EITHER A RHBD PROCESS WITH NAND FLASH CELLS. THE RH-EFLASH WILL BE MANUFACTURED ON KNOWN RADIATION CHARACTERIZED ASIC PROCESSES: EXAMPLES BEING 130 NM OR 65 NM TSMC OR OTHER US FOUNDRY EQUIVALENTS. USING THE TSMC EXAMPLE, THE RESULTING RH-EFLASH, FABRICATED ON A 65 NM PROCESS, PROVIDES 512 MBIT TO 1 GBIT OF RADIATION HARDENED (SEU, SEFI, SEL AND TID) NAND FLASH MEMORY. OPERATING TEMPERATURE AND PACKAGING RELIABILITY IS ADDRESSED THROUGH A THOROUGH MEMORY INTEGRATED CIRCUIT DESIGN (TEMPERATURE) AND POST IC HIGH-RELIABILITY PACKAGE SELECTIONS (I.E. CERAMIC PACKAGES). NOTE THAT THIS TECHNOLOGY IS PORTABLE TO FUTURE AVAILABLE AND RADIATION TESTED ASIC PROCESSES WITH EVEN FINER GEOMETRIES AND HIGH DENSITY.