SPIRE SEMICONDUCTOR PROPOSES TO MAKE AN INGAAS-BASED THREE-JUNCTION (3J) TANDEM THERMOPHOTOVOLTAIC (TPV) CE…
Award details are derived from public USAspending.gov records. Not a bid recommendation.
Award details
- Award ID
- NNX11CE10P
- Contractor
- Awarding agency
- National Aeronautics and Space Administration
- Sub-agency / office
- National Aeronautics and Space Administration
- Award amount
- $0
- Period of performance
- Jul 26, 2011 – Sep 29, 2011
- NAICS
- 541712 — Research and Development in the Physical, Engineering, and Life Sciences
- PSC
- PSC AR11
- Place of performance
- MS
Public award description
SPIRE SEMICONDUCTOR PROPOSES TO MAKE AN INGAAS-BASED THREE-JUNCTION (3J) TANDEM THERMOPHOTOVOLTAIC (TPV) CELL TO UTILIZE MORE OF THE BLACKBODY SPECTRUM (FROM A GPHS) EFFICIENTLY. SEMI-INSULATING INP WAFERS WILL BE USED FOR MONOLITHICALLY INTEGRATED MODULE (MIM)COMPATIBILITY AND TO ACHIEVE LOW FREE-CARRIER ABSORPTION. IN PHASE 1, WE WILL DESIGN, EPITAXIALLY GROW, AND PROCESS LARGE AREA SINGLE JUNCTION TEST CELLS FOR EACH OF THE THREE BANDGAPS PROPOSED (TO EVALUATE MATERIAL QUALITY), AS WELL AS FOR A FULL TANDEM CELL STRUCTURE. IN PHASE 2, WE WOULD FURTHER REFINE THE STRUCTURE AND INCORPORATE THE MATERIAL INTO MIM MODULES.
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