A NEW METHOD OF TRANSFERRING EPITAXIALLY GROWN ACTIVE FILMS ONTO AN INEXPENSIVE POLYMERIC FLEXIBLE CARRIER.…
Award details are derived from public USAspending.gov records. Not a bid recommendation.
Award details
- Award ID
- NNX11CE60P
- Contractor
- Awarding agency
- National Aeronautics and Space Administration
- Sub-agency / office
- National Aeronautics and Space Administration
- Award amount
- $0
- Period of performance
- Aug 17, 2011 – Sep 29, 2011
- NAICS
- 541712 — Research and Development in the Physical, Engineering, and Life Sciences
- PSC
- PSC AR11
- Place of performance
- MA
Public award description
A NEW METHOD OF TRANSFERRING EPITAXIALLY GROWN ACTIVE FILMS ONTO AN INEXPENSIVE POLYMERIC FLEXIBLE CARRIER. SPECIFICALLY, FOR MAKING THIN LIGHTWEIGHT HIGH EFFICIENCY (>30%) IMM3J SOLAR CELLS WHILE REUSING THE GAAS OR GE BASE WAFER. THIS WILL REDUCE THE COSTS OF FABRICATING HIGH EFFICIENCY PV CELLS BY 30% AND WILL RAISE SPECIFIC POWER TO>200W/KG. THE METHOD USES A THIN STRAINED LAYER UNDER THE EPITAXIALLY GROWN ACTIVE LAYERS WITHOUT ION IMPLANTATION OR WET ETCHING. A CRACK PROPAGATES IN THE STRAINED LAYER SPLITTING THE EPI-LAYERS FROM THE BASE WAFER AFTER BONDING TO POLYIMIDE WAFER, HENCE DRY EPITAXIAL LIFT-OFF (DELO), DUE TO THE DIFFERENCE IN THERMAL EXPANSION COEFFICIENTS BETWEEN THE SEMICONDUCTOR AND FLEXIBLE SUBSTRATE WITHOUT APPLYING MECHANICAL PRESSURE. THE BASE WAFER IS RE-USED TO GROW NEW EPI-LAYERS.
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