RECENTLY, RESONANT-TUNNELING-DIODE (RTD) BASED CIRCUITS EMPLOYING MONOLITHICALLY-INTEGRATED RTD ON HIGH ELE…
Award details are derived from public USAspending.gov records. Not a bid recommendation.
Award details
- Award ID
- NNX12CE68P
- Contractor
- Awarding agency
- National Aeronautics and Space Administration
- Sub-agency / office
- National Aeronautics and Space Administration
- Award amount
- $0
- Period of performance
- Mar 14, 2012 – Aug 13, 2012
- NAICS
- 541712 — Research and Development in the Physical, Engineering, and Life Sciences
- PSC
- PSC AR11
- Place of performance
- MN
Public award description
RECENTLY, RESONANT-TUNNELING-DIODE (RTD) BASED CIRCUITS EMPLOYING MONOLITHICALLY-INTEGRATED RTD ON HIGH ELECTRON MOBILITY (HEMT) STRUCTURES HAVE BEEN DEVELOPED IN A NUMBER OF III-V SYSTEMS IN ORDER TO IMPROVE OPERATIONAL SPEED. THE MAIN GOAL OF THIS PROGRAM IS TO DEVELOP WIDE TEMPERATURE-OPERABLE RADIATION HARD MONOLITHICALLY-INTEGRATED ELECTRONICS BASED ON WIDE BANDGAP III-NITRIDE EPITAXIAL STRUCTURES. IN THE PHASE I PROGRAM, WE PROPOSE TO DEVELOP SAME-WAFER DISCRETE DEVICES (CAPACITORS, HEMTS, AND RTDS) BY EMPLOYING A NOVEL MULTI-LAYER ALN/GAN HETEROSTRUCTURE DESIGN, AND TO DEMONSTRATE THE RADIATION HARDNESS OF THESE DEVICES.
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