SBIR/STTR Research Award

High Voltage Cooling system for High Dissipation Power GaN Transistors

Award identifier ee43ef71de6c656932565653b9c0b8d217e7151212689edea50760d090c4968eAwarding agency Department of Energy

Award amount

$149,508

Program and phase

SBIR · Phase I

Award year

2018

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
RADIABEAM SYSTEMS, LLC
Proposal award date
2018-07-02
Contract end date
2019-04-01
UEI
GRKLZTXQZXE6
Solicitation number
DE-FOA-0001771
Topic code
24a

Research abstract

The beam deflector is among the key components of the Medium Energy Beam Transport (MEBT) of the Proton Improvement Plan-II (PIP-II). It will be driven by a high voltage (HV) switch currently under development at Fermilab. It is based on an array of field-effect switching transistors (FETs) operating at kV floating potentials and at as high as 30 MHz frequency. The transistors dissipate ~200 W/cm2 power and need to be electrically insulated while the FET operating temperature is kept below 60C. In this project, RadiaBeam Systems will develop an effective cooling system without distortion of the nanosecond waveform that can be affected by presence of the HV cooling structure. The cooling system robustness and efficiency is enabled by a number of innovations: a) all- diamond heat spreader structure with vacuum-brazed fins; b) mini-channels enhancing heat transfer coefficient; b) expansion-matched holder for the spreader; c) low parasitic capacitance (<1pF) enabled by combination of the large area diamond spreader, small brazed area, and low permittivity of the fluorocarbon cooling fluid; d) ultrasound-enhanced heat transfer due to low acoustic impedance of the fluid, streaming, and cavitation; and e) low-melting-temperature alloy used as the interface between the FET and polycrystalline diamond surface. In Phase I we will analyze and compare different approaches for cooling enabling the HV, low- capacitance performance; select and optimize the most promising configuration with electrical and thermal simulations; compare and choose the most suitable materials, which are critical for the performance and design/engineer the cooling assembly; develop the experimental setup and mockup equivalent for a single-FET; and perform a feasibility demonstration.Commercial Applications and Other Benefits: The initial target segment for this technology is accelerator facilities. Other future applications include civil and military electronic components including radars and power conversion devices, frontier lasers and high power electro-optics, ozonators, ground penetrating radars, pulsed radiolysis.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

61 SBIR/STTR records share this UEI (2013–2025). Reported award amounts total $34,857,770. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Energy

Agency intelligence

Department of Energy

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