All-ALD Hafnia and Ferrite-based Multiferroics for CMOS-Compatible Tunable Microwave Applications

The next generation of Army communications and electronic warfare systems requires enhanced performance in concert with reduced size, weight, and cost. These goals require the availability of new materials, integration strategies, and process science solutions to realize novel frequency-agile and frequency-selective open architecture device components with enhanced performance and functionality. We will develop composite multiferroic thin films for tunable microwave applications. These films will be deposited by atomic layer deposition and all processing temperatures will be kept below 450C, making our devices CMOS-compatible. We will carry out a full range of material and electrical tests on our films and devices to ensure they meet the Army's needs.