SBIR/STTR Research Award

Characterization and Mitigation of Radiation and High Temperature Effects in SiC Power Electronics

Award identifier 20034ba5c2c88230134f3996560e2d4d7c2f4450008909751fc5219d8aabd354Awarding agency National Aeronautics and Space Administration

Award amount

$749,900

Program and phase

SBIR · Phase II

Award year

2017

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
CFD Research Corporation
Proposal award date
2017-04-20
Contract end date
2019-04-19
UEI
V3KCP1HNFM33
Solicitation number
Not reported
Topic code
Z1.01

Research abstract

Future NASA science and exploration missions require significant performance improvements over the state-of-the-art in Power Management and Distribution (PMAD) systems. Space qualified, high voltage power electronics can lead to higher efficiency and reduced mass at the spacecraft system architecture level, and serve as an enabling technology for operational concepts such as solar electric propulsion. Silicon carbide (SiC) is a robust technology with superior electronic properties for power applications. SiC devices offer higher temperature operation, lower on-resistance, higher breakdown voltages, and higher power conversion efficiency than silicon devices. However, high vulnerability to heavy-ion induced degradation and catastrophic failure has precluded this technology from space PMAD applications. Importantly, physical mechanisms for this vulnerability are not well understood, resulting in the inability to develop radiation hardened SiC devices. CFDRC, in collaboration with Vanderbilt University and Wolfspeed, is applying a coupled experimental and physics-based modeling approach to address this challenge. In Phase I, we performed electrical and heavy ion tests on 1200V Wolfspeed SiC JBS diodes to generate response data, and performed TCAD simulations to investigate diode sensitivity to design parameters and analyze electro-thermal mechanisms behind measured response. In Phase II, we will develop further insight into physical mechanisms in the diodes via development and application of advanced physics models. We will parametrically analyze design features to identify promising hardness solutions, which will then be fabricated and experimentally characterized. We will also perform heavy-ion testing of 1200V SiC MOSFETs and apply simulations for insights into governing mechanisms (to be further developed in follow on work). Direct participation by Wolfspeed in Phase II and beyond will ensure space-qualified, SiC power devices for NASA applications.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

947 SBIR/STTR records share this UEI (1987–2026). Reported award amounts total $350,893,199. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Health and Human Services, National Science Foundation, Department of Commerce, Department of Energy

Agency intelligence

National Aeronautics and Space Administration

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