SBIR/STTR Research Award

Radiation-assisted MOCVD Heating for Improved Within-wafer Temperature Uniformity in LED Manufacturing

Award identifier e0eb8c193c12a65d4436b2c6bbf22891af35e8ad5f55355149a85ad72587bb81Awarding agency Department of Energy

Award amount

$155,000

Program and phase

SBIR · Phase I

Award year

2017

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
SC SOLUTIONS, INC.
Proposal award date
2017-02-21
Contract end date
2017-11-20
UEI
MGPZGMNLJ8R9
Solicitation number
DE-FOA-0001618
Topic code
11c

Research abstract

This Small Business Innovative Research (SBIR) Phase I project will demonstrate the feasibility of an innovative control technology for improved within-wafer temperature uniformity in Metal-Organic Chemical Vapor Deposition (MOCVD) process that is used in the fabrication of Multi-Quantum Well (MQW) LEDs. The proposed control technology has the strong potential to substantially reduce the need for “binning” in LED manufacturing. The deposition processes create significant variations in LED performance primarily as a result of temperature non-uniformity within the wafer. To mitigate this problem, LED manufacturers group the devices into “bins” with each bin spanning a range of color temperature, voltage or lumens. However, binning reduces yield, and produces devices with less desirable colors that hinders widespread acceptance of LED lighting. SC will address the problem by employing radiant heating from the top of the wafer with a heat flux profile shaped using a specially designed mask. The heater will be located beyond the susceptor edge and it will be controlled, together with the susceptor heaters, using an integrated control architecture. This approach will dramatically reduce within-wafer non-uniformity by 90% or more. In Phase I, we will design the radiant heating system including choice of heater and mask design. Additionally, we will formulate an integrated control system (open and closed-loop) which can rapidly ramp wafer temperature up and down through the process cycle while maintaining excellent within-wafer temperature uniformity. We will thus demonstrate feasibility of the concept on a bench-scale experiment with a heated plate. Commercial Applications and Other Benefits The proposed program for developing an innovative temperature control scheme for epitaxial deposition of GaN for LED manufacturing process has the potential to dramatically reduce the need for LED binning. The control concept demonstrated in Phase I on a bench-scale set-up will be productized in Phase II. This novel control technology will help maintain U.S. leadership in MOCVD equipment used for LED and other semiconductor applications. The increase in yield of LEDs with desirable color will help the LED market keep pace with DoE’s goals of accelerating the pace of adoption of LED lighting and reducing the price of LED lighting by a factor of ten over this decade.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

21 SBIR/STTR records share this UEI (1999–2021). Reported award amounts total $6,947,176. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: National Science Foundation, Department of Defense, Department of Energy, Department of Transportation, Department of Commerce

Agency intelligence

Department of Energy

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