SBIR/STTR Research Award

STTR Phase I: Nondestructive high-resolution measurement of semiconductor carrier density

Award identifier 6e51f52980e7639f21eba315e1710c2f517769dbdf67273a4db8e4bab895757fAwarding agency National Science Foundation

Award amount

$224,543

Program and phase

STTR · Phase I

Award year

2017

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
NEWPATH RESEARCH LLC
Proposal award date
2017-01-15
Contract end date
2017-12-31
UEI
QYNYBRRHNFC4
Solicitation number
Not reported
Topic code
MI

Research abstract

This Small Business Technology Transfer Phase I project will develop advanced tools for semiconductor metrology that are essential for high accuracy at finer resolution as progress continues to the finer lithography nodes. This progress is essential to satisfy the demand for greater performance in numerous consumer products as well as many other applications. The intellectual merit of this project lies in a newly-discovered optoelectronic effect which will provide much finer resolution in measuring the local density of the charge carriers in semiconductors, and this new method shows promise for achieving sub-nanometer resolution. Roadmaps for the semiconductor industry call for finer resolution, and this project is responding to specific needs outlined therein.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

3 SBIR/STTR records share this UEI (2007–2017). Reported award amounts total $474,481. Reported amounts are not federal obligations.

Phases: Phase I

Agencies: National Science Foundation, Department of Energy

Agency intelligence

National Science Foundation

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