Watt-level THz Solid-State RF Amplifiers Using All-Metal-Terminal Hot-Electron Transistors (AMTHETs)

The objective of the proposed project is to develop designs for manufacturable all-metal terminal hot-electron transistors (AMTHETs) that will enable 1W 10W THz RF amplifiers and oscillators. The proposed work will focus on quantum-mechanical modeling to characterize the performance of AMTHETs for amplification and oscillation at THz frequencies. In parallel with the modeling effort, likely manufacturing strategies will be explored and models for manufacturable devices will be constructed. The final aspect of the project will be the design of a distributed power combining system that allows efficient RF power combining from a physically large array of AMTHETs. By the end of the project, an AMTHET design and the associated circuit models, based on a manufacturable process flow, will be developed in order to prove out the ability of AMTHETs to achieving THz RF power amplification. In addition, in-phase power combining transmission line network operating at THz frequencies will be designed simulated in COMSOL to prove out the ability of this technology to achieve Watt-level RF power output levels.