SBIR/STTR Research Award

STTR Phase II: Low Temperature Cofired Multilayer Ceramic Power Transformers Incorporating Base Metallization Materials

Award identifier b1392df4c3b00c8bac6a244b61ed9336198ebc7e9f1587fc2598f3416cd0bc6eAwarding agency National Science Foundation

Award amount

$637,300

Program and phase

STTR · Phase II

Award year

2016

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
Solid State Ceramics, Inc.
Proposal award date
2016-10-01
Contract end date
2018-09-30
UEI
QLYEPZDXURK5
Solicitation number
Not reported
Topic code
EW

Research abstract

The broader impact/commercial potential of this project is to a wide range of electronics in the areas of communications, Internet, portable electronics, and power electronics. Although magnetic based transformers have been the industry standard for over a century they have many negatives including miniaturization difficulties, electromagnetic interference issues, and issues with larger voltage step-up applications. The main goal of the research is to develop a ceramic replacement for magnetic transformers that is both conducive to miniaturization, provides higher power densities, provides a large increase in safe operating temperatures, and that is cost competitive with standard magnetic devices. This technology will provide important advantages for many applications; the ability to produce at low cost also opens up large new markets that are not easily reached using conventional magnetics. This Small Business Technology Transfer (STTR) Phase 2 project aims to develop new low temperature sintering processes and transformer structures that enable the use of base metal electrodes to replace very expensive platinum. This drastically reduces costs of ceramic transformers and substantially improves performance due to the fact that a poor electrical/thermal conductor, Platinum, is now replaced with base metal (Copper) that is a high performance electrical/thermal conductor. This translates into both higher power throughput in devices that are lighter weight and lower profile and also a new ability to now match the high temperature range of wide bandgap power devices. The success of this program immediately leads to a revolutionary next step of being able to insert power management/conversion electronics directly within integrated circuits such as in application specific integrated circuits (ASIC) and field programmable gate arrays (FPGA).

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

7 SBIR/STTR records share this UEI (2013–2018). Reported award amounts total $3,021,413. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: National Science Foundation, Department of Defense, National Aeronautics and Space Administration

Agency intelligence

National Science Foundation

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