High Gain, High Power PCSS with Integrated Monolithic Optical Trigger

The objective of this Phase II proposal is to continue the development of a Photoconductive Semiconductor Switch (PCSS) with an integrated optical trigger that can switch at least 30 kV, 1 kA, 20 ns pulses with jitter 108 shots. Ness Engineering, Inc. (NEI) and Texas Tech University (TTU) propose to utilize wide bandgap materials to demonstrate lock-on switching and allow much less optical trigger pulse energy to activate the PCSS device. PCSS designs such as this would be useful for a variety of applications, including those identified by the Army: Ultra Wide Band (UWB) sources and ground penetrating radar for use in detecting and potentially neutralizing Improvised Explosive Devices (IEDs). NEI and TTU have the unique expertise and facilities to design, construct and test a brassboard prototype photoconductive switch to demonstrate the technology and continue the development through to commercialization. The three researchers on the NEI/TTU team have a combined experience of almost 100 years in pulsed power and solid state device development.