Gallium Nitride (GaN) based 28 VDC Circuit Protection and Distribution

Recent advances in commercially available Gallium Nitride (GaN) MOSFETS offer significant advantages compared to traditional Silicon devices for circuit protection and power distribution applications including the availability of devices in advanced packaging options, lower on-state resistances, and improved performance in harsh electromagnetic environments.To demonstrate these advantages of GaN in military platforms, in this SBIR effort, PCKA proposes to design a 28Vdc, 32-channel Gallium Nitride (GaN) based power distribution box capable of operating across all military ground vehicles.It is anticipated that the proposed box will be able to achieve target maximum current throughput with reduced size, weight, and cooing requirements compared to a similarly designed Silicon based distribution box.Further, it is assumed that all of these capabilities shall be met while maintaining or improving upon the safety, efficiency, robustness, and stability requirements that would be essential for a modernized combat vehicle.In the Phase I effort, key aspects of the proposed GaN power distribution will be designed and verified through a combination of advanced modeling, simulation, and analysis (MS&A) and hardware prototyping and test to a degree sufficient to warrant transition to a more complete Phase II development effort.