High Current Silicon Carbide Schottky Diodes for Electric Drive Vehicle Power Electronics
Award amount
$1,008,437Program and phase
SBIR · Phase IIAward year
2016Award details
- Awarding agency
- Department of Energy
- Branch
- Not reported
- Recipient company
- United Silicon Carbide, Inc.
- Proposal award date
- 2016-08-01
- Contract end date
- 2018-07-31
- UEI
- E1ZMN21UWJK5
- Solicitation number
- DE-FOA-0001490
- Topic code
- 17b
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High Power Solid State Electronic Switch for Use in Exploding Foil Initiator Applications
- High Current SiC Cascodes for Electric Drive Vehicle Power Electronics
- Silicon Carbide Gate Driver
- High Current SiC Cascodes for Electric Drive Vehicle Power Electronics
- Extreme Environment Electronics Based on Silicon Carbide
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Open source (S)TEM control using Nion Swift: powerful and user-friendly software for microscope control, data analysis and visualization
- Open-Source Control Software for TEM
- Commercialization of Power Dense Nanocomposite Based REE-Free Axial Flux Motors
- Rare earth free motor designs with MnBi
- .NOVEL MEMBRANE SYSTEM FOR LITHIUM RECOVERY FROM OILFIELD BRINES
Research funding history
56 SBIR/STTR records share this UEI (1999–2018). Reported award amounts total $19,121,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation