SBIR/STTR Research Award

Silicon Carbide MOSFETs for Electric Vehicle Drive Applications

Award identifier 47a697ffacd30a13f944d292b8649dd09ae3ff5388d424e189d7018f6983e266Awarding agency Department of Energy

Award amount

$149,929

Program and phase

SBIR · Phase I

Award year

2016

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
MONOLITH SEMICONDUCTOR INC
Proposal award date
2016-06-13
Contract end date
2017-02-12
UEI
Not reported
Solicitation number
DE-FOA-0001417
Topic code
14

Research abstract

Silicon Carbide based power electronics have the opportunity to increase the power density and efficiency of on-­‐board electric power conversion electronics for electric vehicles boost converters and electric traction drives. Utilizing these advanced SiC-­‐based power electronics devices is expected to expand range and eventually reduce electric vehicle system costs. However, the current high cost for SiC power MOSFETs and diodes prevents widespread adoption in automotive applications. In this Phase I SBIR program, Monolith Semiconductor will advance the performance and cost of high-­‐current SiC power MOSFETs to meet the demanding needs of automotive inverter drive applications. In addition to these performance advances, Monolith Semi will demonstrate SiC MOSFET technology that is suitable for high-­‐volume manufacturing.

Technology keywords

Not reported

Agency intelligence

Department of Energy

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