SBIR/STTR Research Award

Development of 600V, 100A SiC Schottky Diodes in a 150mm Si Foundry for Electric Vehicle Traction Inverter Applications

Award identifier abfb4ba2f2b5222be10632bd3f020b21ef91e78da4f8412127e06966beffd13cAwarding agency Department of Energy

Award amount

$149,950

Program and phase

SBIR · Phase I

Award year

2015

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
MONOLITH SEMICONDUCTOR INC
Proposal award date
2015-06-08
Contract end date
2016-03-07
UEI
Not reported
Solicitation number
DE-FOA-0001227
Topic code
17b

Research abstract

The final objective of the phase 1 and 2 research is to develop cost-effective, automotive qualified, 600V, 100A SiC Schottky diodes for use in traction inverter applications. The phase 1 research will focus on laying the foundation towards understanding the key factors for achieving high yield, high reliability and low costcritical for adoption in the automotive applications. In phase 1 program, 600V, 100A SiC Schottky diodes will be designed and fabricated in a large volume, automotive qualified 150mm Si foundry. The key yield limiters for the large area SiC diodes will be studied and the design/process trade-offs to maximize the yield and lower the cost will be presented. A preliminary reliability assessment will be performed in phase 1 to lay the groundwork for AEC-Q101 qualification in phase 2. A financial analysis that demonstrates the viability of low cost, 600V, 100A diodes via a fabless manufacturing model using 150mm Si foundry will be presented.

Technology keywords

Not reported

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Agency intelligence

Department of Energy

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