SBIR/STTR Research Award
Development of 600V, 100A SiC Schottky Diodes in a 150mm Si Foundry for Electric Vehicle Traction Inverter Applications
Award amount
$149,950Program and phase
SBIR · Phase IAward year
2015Award details
- Awarding agency
- Department of Energy
- Branch
- Not reported
- Recipient company
- MONOLITH SEMICONDUCTOR INC
- Proposal award date
- 2015-06-08
- Contract end date
- 2016-03-07
- UEI
- Not reported
- Solicitation number
- DE-FOA-0001227
- Topic code
- 17b
Research abstract
The final objective of the phase 1 and 2 research is to develop cost-effective, automotive qualified, 600V, 100A SiC Schottky diodes for use in traction inverter applications. The phase 1 research will focus on laying the foundation towards understanding the key factors for achieving high yield, high reliability and low costcritical for adoption in the automotive applications. In phase 1 program, 600V, 100A SiC Schottky diodes will be designed and fabricated in a large volume, automotive qualified 150mm Si foundry. The key yield limiters for the large area SiC diodes will be studied and the design/process trade-offs to maximize the yield and lower the cost will be presented. A preliminary reliability assessment will be performed in phase 1 to lay the groundwork for AEC-Q101 qualification in phase 2. A financial analysis that demonstrates the viability of low cost, 600V, 100A diodes via a fabless manufacturing model using 150mm Si foundry will be presented.
Technology keywords
Not reported
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