SBIR/STTR Research Award

Radiation-Hardening of Best-In-Class SiGe Mixed-Signal and RF Electronics for Ultra-Wide Temperature Range

Award identifier 9052d37df386ed9d337b35ec32d485d9500494fd3a7a5dc6988f63afd973156aAwarding agency National Aeronautics and Space Administration

Award amount

$749,918

Program and phase

SBIR · Phase II

Award year

2015

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
CFD Research Corporation
Proposal award date
2015-05-15
Contract end date
2017-05-14
UEI
V3KCP1HNFM33
Solicitation number
Not reported
Topic code
S4.04

Research abstract

Innovative, reliable, low-power, and low-noise electronics that can operate over a wide temperature range and high radiation are critical for future NASA missions. Silicon Germanium (SiGe) is a robust IC technology with superior electronic properties, resilience to harsh environments, and moderate cost of Si fabrication that can dramatically reduce mission size-weight-and-power and cost (SWaP-C). IBM's 90-nm state-of-the-art 9HP SiGe BiCMOS platform delivers higher performance and lower power, and enables highly integrated (sub-) millimeter wave applications not possible with earlier SiGe nodes. It is therefore, a prime candidate for designing future mixed-signal/RF electronics for NASA. Currently, however, there are few wide-temperature/radiation data, models, and circuits in this platform. Advanced computational tools are essential to support design and assess performance of 9HP-based electronics. This project aims to develop novel Radiation Hardened By Design (RHBD) analog/mixed-signal and RF ICs in the best-in-class 9HP technology. In Phase I, CFDRC and Georgia Tech investigated the electrical performance of 9HP SiGe HBTs across an ultra-wide temperature range. HBT-based circuits were examined for single-event transient (SET) response via irradiation testing and detailed mixed-mode simulations. RHBD techniques were identified for further evaluation. In Phase II, we will select representative 9HP-based circuits from high-frequency and general purpose (low-frequency analog/mixed-signal) applications, and perform electrical and radiation response characterization (DC and RF) across a wide temperature range, via testing and mixed-mode modeling. RHBD techniques will be implemented and verified via modeling, and promising designs will be fabricated, tested, and delivered to NASA. Technology scaling effects on extreme environment performance of SiGe HBTs/circuits across different generations (9HP vs. 8HP vs. 5AM) will be evaluated to support design/trade-off analyses

Technology keywords

Not reported

Other awards by this recipient

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Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

947 SBIR/STTR records share this UEI (1987–2026). Reported award amounts total $350,893,199. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Health and Human Services, National Science Foundation, Department of Commerce, Department of Energy

Agency intelligence

National Aeronautics and Space Administration

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