Quantifying Appropriate De-rating of 1.2kV, 1.7kV and 3.3kV SiC MOSFETs Subject to Cosmic Rays

In the budget period 1 of the phase-II proposal, the effect of terrestrial cosmic rays on the failure rate of 1.2kV, 1.7kV and 3.3kV SiC power MOSFETs will be studied. The goal of the study is to quantify the appropriate breakdown voltage de-rating needed for SiC MOSFETs subject to cosmic rays. The failure rate of SiC power MOSFETs as a function of the reverse blocking voltage will be determined and compared to failure rate of 1.2kV, 1.7kV and 3kV Si IGBTs acquired under same test conditions. In the budget period 2, radiation hardened 1.2kV, 1.7kV and 3.3kV MOSFETs will be designed, fabricated and tested under same test conditions as baseline devices to evaluate the failure rate improvements as a function of the reverse voltage.