SBIR/STTR Research Award

GaAsSb/AlGaAsP Superlattice Polarized Electron Source

Award identifier 6d8df5560af836fdcd65e8fbc1d26e2756967db399112ce6be92fe175607408dAwarding agency Department of Energy

Award amount

$999,810

Program and phase

SBIR · Phase II

Award year

2014

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
SVT ASSOCIATES INC
Proposal award date
2014-04-08
Contract end date
2016-04-07
UEI
MLVQMLJLC139
Solicitation number
DE-FOA-0001019
Topic code
41e

Research abstract

The negative-electron-affinity (NEA) photocathodes which produce polarized electrons are a vital component of electron accelerators such as that at DoE Jefferson Lab and the Stanford Linear Accelerator Center (SLAC). Future systems, such as the International Linear Collider (ILC), will require a polarized electron beam intensity at least 20 times greater than produced by strained GaAs, which is used in the current generation of photocathodes. Additionally, the degree of electron polarization needs to be increased beyond the 80% currently attainable and intrinsic material properties related to improving the surface charge limit must also be addressed, and the photocathodes should be more robust in an RF gun environment. The end result of the combined Phase I Phase II effort will be a new generation of robust photocathodes capable of yielding intense, highly polarized electron beams for use in advanced electron colliders. We have previously achieved & gt; 85% polarization using a strained superlattice formed from alternating layers of GaAs and GaAsP approximately ten monolayers thick. For this program we will apply a novel strain- compensated superlattice concept utilizing antimony-, arsenic-, and phosphorus-based material which should overcome material limitations of the GaAs/GaAsP alloys. In the Phase I we designed and fabricated an Sb- and P-based strain-compensated superlattice structure grown by molecular beam epitaxy. The Phase I program optimized the growth conditions to achieve the desired alloy composition and interface quality. Photocathode structures were grown and characterized. Novel Sb-based SL photocathodes studied in Phase I will be further optimized by investigating parameters that can affect the polarization and quantum efficiency of these photocathodes for high current electron guns. Further improvement on QE The performance of the optimized cathodes will be evaluated in realistic gun environment by Jefferson Lab. Commercial Applications and Other Benefits: A successful project will produce a highly efficient polarized electron source for use in experimental research at DoE Jefferson Lab, SLAC, and other electron collider facilities. These devices have applications in other areas which include magnetic imaging research, surface analysis, Quantum computing and cryptography.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

165 SBIR/STTR records share this UEI (1990–2014). Reported award amounts total $29,785,067. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation

Agency intelligence

Department of Energy

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