Develop and Demonstrate High Performance Infrared Focal Plane Arrays with Advanced Quantum Structures

In this program nBn Technologies proposes to developed new nBn FPAs for long wave IR. This is based on III-V material systems grown in MBE. We will concentrate on material systems that will fit the nBn concept, especially holes transport and passivation free (the barrier used as passivation).The progress for this new material system has been very significant. We have successfully demonstrated that the new system InAs-InAsSb, GaSb free, is more than suitable to be the new material for long-wave nBn detectors.The core effort of the Phase II program will be to further develop and fabricate four prototype nBn FPAs and 2 cameras that demonstrate Long Wave nBn. In addition data for single element of two colors MWIR-LWIR nBn detector will presented, through utilization of Ga free InAsSb material. Current Long Wave cooled infrared FPAs for military application are mainly base on HgCdTe, QWIPs or GaSb/InAs SLS-II. All three technologies have disadvantages that result in poor solutions for the MDA.HgCdTe Small FPAs very low operability very expensive material system. QWIPS: low QE, high dark current. InAa/GaSb SLS-II: low QE (need ~10um material growth for 50% QE, low operability (mesa type devices require passivation, large arrays are very limited).