SBIR/STTR Research Award

Negative Electron Affinity GaAs as a Thermoelectric Cooler Element

Award identifier de68d07a5414c48d78b592b10cdf5db6994f5c26dd016dff9709ac177f80dc85Awarding agency Department of Defense · Army

Award amount

$500,000

Program and phase

SBIR · Phase II

Award year

2013

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
Saxet Surface Science
Proposal award date
2013-09-20
Contract end date
2015-09-19
UEI
YBNKV4KVRVM4
Solicitation number
2011.1
Topic code
A11-014

Research abstract

The goal of this program is to create a prototype thin film superlattice thermoelectric cooler incorporating a parasitic heat leakage path defeating vacuum break via use of a negative electron affinity photoemitter surface as a free electron current source and to demonstrate its operation in a standalone vacuum system. In this work, a negative electron affinity surface will be qualified as sufficient to generate the requisite transport current in a thermoelectric coolerfriendly geometry, the thermal clean and activation process effects on the thin film superlattice layers and vice versa will be characterized, the best terminating photoemissive layer, GaAs or amorphous SiGe will be determined, the GaAs release layer and the GaAs/thin film superlattice interface and growth performance will be optimized via continued measurement and process feedback, cooling tests in a system allowing rapid sample turnaround will be performed and a prototype standalone system to demonstrate the device function will be constructed.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

14 SBIR/STTR records share this UEI (2006–2014). Reported award amounts total $5,420,000. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Energy, Department of Defense

Agency intelligence

Department of Defense

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