Ring-Cavity Surface-Emitting Quantum Cascade Lasers for High Power Applications at 4.5 um

Surface emitting semiconductor lasers eliminate the necessity for facet cleaving and allow for wafer scale testing, which increase the manufacturing yield and reduces the cost. However, in the mid-infrared, surface emitting semiconductor lasers are significantly underdeveloped compared to edge emitting devices. The proposed research will investigate the feasibility of using ring-cavity surface-emitting quantum cascade lasers for power scaling at a wavelength of 4.5 & #181;m. This approach allows for two-dimensional integration of multiple emitters on a single chip. A single mode emitting spectrum, excellent beam quality, and high power can be simultaneously achieved with this technology.