SBIR Phase I: Development of Large-Area Crystal-Aligned Substrates for Epitaxial Graphene
Award amount
$150,000Program and phase
SBIR · Phase IAward year
2013Award details
- Awarding agency
- National Science Foundation
- Branch
- Not reported
- Recipient company
- IBEAM MATERIALS, INC.
- Proposal award date
- 2013-07-01
- Contract end date
- 2013-12-31
- UEI
- VBD3AEMRUN17
- Solicitation number
- Not reported
- Topic code
- NM
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Simplified Wide-Web IBAD Templates for Low-cost HTS Wire
- Novel Process for Low-cost Large-area GaN Templates on Metal Foils
- Epitaxial GaN on Flexible Metal Tapes for Low-Cost Transistor Devices
- Epitaxial GaN on flexible metal tapes for low-cost transistor devices
- Epitaxial GaN on flexible metal tapes for low-cost transistor devices
Research funding history
7 SBIR/STTR records share this UEI (2013–2025). Reported award amounts total $3,531,043. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Energy, Department of Defense, National Science Foundation