Scalable Single- and Multi-"Boule"Bulk GaN Substrate HVPE Production Tool

GaN-based devices are currently grown on foreign substrates such as SiC and Al2O3, due to the lack of high quality GaN substrates. It is well known that the use of foreign substrates limits device performance due to a high dislocation density in the GaN film. Structured Materials Industries, Inc. (SMI) has developed a hybrid HVPE approach to grow high quality GaN device films. In this SBIR project, SMI will work with a leading University research center, to implement cost effective processes for growth of GaN crystal boules and processing to polished wafers. Phase I will build on existing results to prove the approach can concurrently produce thick multiple 2"or 4"diameter boules of low defect semi-insulating (or doped as desired) GaN wafers merged with cutting and polishing processes. Phase II will establish pilot production of multiple 2"and 4"GaN boules, and processing to polished wafers. Also in Phase II, GaN devices will be fabricated on the resulting wafers, as a test and demonstration of the material quality. Phase III will consist of selling the finished materials and production tooling.