High Efficiency 808 nm Laser Pump Diode Arrays with Excellent Beam Quality

As part of an effort funded by HEL-JTO, we recently demonstrated advanced quantum well diode laser designs with enhanced confinement operating at 1500 nm that substantially advanced the state-of-the-art with regard to efficiency, high operating temperature and beam quality. Similar enhanced confinement designs will be implemented at 808 nm to greatly improve both electrical-to-optical efficiency and fiber-coupling efficiency. Moreover, by incorporating monolithic internal diffraction gratings in these lasers, linewidths and wavelength tolerances can be reduced by roughly a factor of 4 compared to standard pump diodes without incurring the cost and complication of external volume bragg grating stabilizers.