SWIR Image Sensor Based on SiGe Nanomembranes

ABSTRACT: Agiltron and the University of WisconsinMadison will develop the first SWIR Image Sensor with a flexible FPA. The sensor is based on the integration of single-crystal Si and Ge nanomembranes, which has the potential to achieve defect-free Ge-based photodiodes for SWIR imaging while eliminating the need for an epitaxial step. In Phase I, we have successfully demonstrated Ge-based PIN photodiodes with SWIR responsivity and bulk-like dark current. In Phase II, we will build and test a complete SWIR Image Sensor featuring a fully-flexible FPA. BENEFIT: This program addresses the lack of SWIR image sensors with array sizes larger than 10241024 and pixel pitches smaller than 10 & #956;m. Increasing the resolution and sensitivity in SWIR imaging is critical for night-vision applications such as surveillance, passive imaging, target acquisition and designation, and forward observation, and for insertion into Intelligence, Surveillance and Reconnaissance (ISR) military and security systems. In addition, developing imaging technology on flexible substrates allows new system capabilities such as a tunable field of view and reduced imaging optics complexity. This will enable high-performance, low-SWAP imagers with a field of view that far exceeds the state of the art possible with planar focal plane arrays.