SBIR/STTR Research Award
Epitaxial growth for facet passivation of high power diode lasers
Award amount
$100,000Program and phase
SBIR · Phase IAward year
2012Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- SDPHOTONICS LLC
- Proposal award date
- 2012-10-29
- Contract end date
- Not reported
- UEI
- MKZNQ6KF4QW9
- Solicitation number
- 2012.2
- Topic code
- SB122-005
Research abstract
A new facet coating material for high power diode lasers will be developed that reduces interface states at the cleaved facet and increases facet cooling. The facet coating is expected to be more robust and lead to increased power and brightness in high power diode lasers, bars and stacks. The facet coating technique makes use of commercial processes based on vacuum cleaving and epitaxial growth, and can be used to add optical elements to improve beam quality and spectral control.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High Speed Vertical Cavity Emitting Laser (VCSEL)
- Ultralow Bit Energy VCSEL-Based Transceiver for High Efficiency, Radiation-Hardened Optical Data Links
- High-Speed Cryogenic Optical Connector for Focal Plane Array Read-out
- High-Speed Cryogenic Optical Connector for Focal Plane Array Read-out
- Tactical Engagement Simulation System (TESS) Improved Laser Encoding and Decoding
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Innovative Passivation to Increase the Power at Which Laser Diode Fails
- Innovative Passivation to Increase the Power at Which Laser Diode Fails
Research funding history
13 SBIR/STTR records share this UEI (2007–2020). Reported award amounts total $3,364,880. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration