Deep ultraviolet laser for Raman spectroscopy

The Phase II program proposes to commercialize frequency quadrupling technology developed in the College of Optical Sciences at the University of Arizona to build a 244 nm UV frequency quadrupled optically pumped semiconductor laser (FQ-OPSL). The laser will provide a self-contained small footprint (<1 cu. ft.) compared to commercially available Ar ion or Kr ion laser which required an external water chiller, nitrogen purges, and consume more than 5 cu. ft. of lab space. The FQ-OPSL will provide 100 mW of power at 244 nm comparable to the larger footprint gas lasers. The FQ-OPSL will provide an ideal laser source for Raman spectroscopy because the 244nm emission line provides 40 times the Raman scattering efficiency and is below the autofluorescence values of most organic materials. The suppression of autofluorescence will improve the signal to noise and reduce the detection threshold for chemicals such as explosive and pharmaceuticals. The small format high output package also offer commercial opportunities in the field of maskless lithography for improved circuit board and semiconductor manufacturing and non-line-of-site military communication for improve within theatre communication speeds up to 100 MB/s.