SBIR/STTR Research Award
In-Vacuo Passivation of High Aspect Ratio HgCdTe Surfaces
Award amount
$429,222Program and phase
SBIR · Phase IIAward year
2012Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- EPIR TECHNOLOGIES INC
- Proposal award date
- 2012-09-25
- Contract end date
- Not reported
- UEI
- M35KZKEQZYK3
- Solicitation number
- 2010.1
- Topic code
- A10-018
Research abstract
The overall goal of this project is to develop a 100 degrees C temperature ALD CdTe passivation process capable of conformally passivating high aspect ratio surfaces of HgCdTe infrared detectors. The effort is comprised of first establishing the low temperature ALD process, next in fully characterizing the resulting CdTe, then implementing in-situ sample surface preparation, and finally in passivating high aspect ratio HgCdTe samples.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High Operating Temperature, Broadband Visible/Infrared HgCdTe Photodetectors
- Near/Short Wavelength HgCdTe/Si-Based Infrared Focal Plane Arrays
- Defect Passivation for High Performance HgCdTe on Si
- Miniaturized Imaging Spectrometer Based on HgCdTe Infrared Focal Plane Arrays
- Low Temperature Thermoelectric Refrigeration with HgCdTe-based Superlattices
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- In-Vacuo Passivation of High Aspect Ratio HgCdTe Surfaces
- In-Vacuo Passivation of High Aspect Ratio HgCdTe Surfaces
Research funding history
102 SBIR/STTR records share this UEI (1997–2016). Reported award amounts total $33,479,082. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Homeland Security, Department of Energy