SBIR/STTR Research Award

High-Power Semiconductor Laser in the 3.0- to 3.5-um Spectral Range

Award identifier 6acb4727818d6dab3e96b62d3437d93286ed7a5f544e1b875543538da20a86b3Awarding agency Department of Defense · Navy

Award amount

$80,000

Program and phase

STTR · Phase I

Award year

2012

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Award details

Awarding agency
Department of Defense
Branch
Navy
Recipient company
SDPHOTONICS LLC
Proposal award date
2012-08-15
Contract end date
Not reported
UEI
MKZNQ6KF4QW9
Solicitation number
2012.A
Topic code
N12A-T003

Research abstract

High quality laser materials based on InP, InGaAs, InAlGaAs, and InAs are proposed to develope high power 3 to 3.5 m diode lasers. An adiabatically broadened amplifying section is proposed to reach high power with high beam quality. The active material uses strained layer epitaxy to rely only on high quality laser materials that can be grown by molecular beam epitaxy, and with high quality on InP substrates. Highly strained active layer can lead to rapid commercial production because of compatibility with existing military suppliers of diode laser epitaxy.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

13 SBIR/STTR records share this UEI (2007–2020). Reported award amounts total $3,364,880. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration

Agency intelligence

Department of Defense

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