SBIR/STTR Research Award

X-Band Bunched Electron Injector

Award identifier 64737a5582cdc0d954b4496631e9174e993cbee7c804c4dd8510f603fddf4f50Awarding agency Department of Energy

Award amount

$1,000,000

Program and phase

SBIR · Phase II

Award year

2012

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
Fm Technologies Inc
Proposal award date
2012-08-08
Contract end date
2014-08-07
UEI
HFGEKK4LZK93
Solicitation number
DE-FOA-0000676
Topic code
66 e

Research abstract

The development of high-current, short-duration pulses of electrons has been a challenging problem for many years. High current pulses are widely used in injector systems for electron accelerators, both for industrial linacs as well as high-energy accelerators for linear colliders. Short-duration pulses are also used for microwave generation in klystrons and related devices, for injectors to perform research on advanced methods of particle acceleration, and for injectors used as free-electron-laser (FEL) drivers. The proposed method to be described below is promising because of a natural bunching process which self-synchronizes to the rf, thus eliminating the need for pre-buncher section(s), timing system, and lasers. Also, the repetition rate can be orders of magnitude greater. FM Technologies proposes a novel high current, picosecond X-band bunched electron gun system which is named the X-band Bunched Electron Injector (XBEI). The heart of the XBEI is a self-bunching electron gun, the X-Band Micro-Pulse Gun (XMPG). By adding an external electron amplifier stage and high energy RF or pulsed voltage post acceleration, an inexpensive, simple, robust electron injector or klystron self-bunching electron gun would result. In Phase I, electron amplification with diamond in the XMPA has been demonstrated, and measurements of electron current gain, charge per bunch, rf power, beam power and other key parameters have been performed. Phase II will be aimed at design, fabrication, and testing of an XBEI to 5-6 MeV and a new type of klystron. This includes development of the electron amplifier for the XMPG and rf acceleration and a klystron output cavity. The experiments will be to establish the baseline for characterizing the XBEI device for suitability for a variety of potential applications. Commercial Applications and Other Benefits: If successful, this micro-pulse electron amplifier injector (XBEI) will provide a high power, low admittance, picosecond-long electron source which is suitable for many applications. Of particular interest are high energy picosecond electron injectors for linear colliders, free electron lasers, medical and industrial rf linacs, a high-frequency driver for rf sources

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

67 SBIR/STTR records share this UEI (1988–2016). Reported award amounts total $21,001,147. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Energy, Department of Defense, National Science Foundation, Department of Health and Human Services

Agency intelligence

Department of Energy

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