Low-Energy Maskless Lithography to Mitigate Radiation Effects in Advanced Nanoscale Microelectronics

Multibeam is developing a unique low-energy maskless e-beam lithography technology. The technology enables the patterning of Radiation Hardened Integrated Circuits (RHICs) with significantly lower cost and extendibility to future technology generations (e.g. 32nm feature size). These advanced RHICs will have improved performance, size, weight, power, and thermal characteristics. This effort is applicable to improving satellite bus and payloads, as well as imaging and processing capability. The technology enables the production of seamless large-format Read Out Integrated Circuits (ROICs) with high yield and reliability. The Phase I research effort simulates the performance of a new, cost-effective e-beam column design with the ability to pattern ICs at the 45nm technology node and below at low energy, maintaining radiation hardness. In Phase II we will build an e-beam column capable of patterning wafers at the 45nm technology node and below.