SBIR/STTR Research Award
Wide Bandgap Gallium Phosphide Detectors
Award amount
$150,000Program and phase
STTR · Phase IAward year
2012Award details
- Awarding agency
- Department of Energy
- Branch
- Not reported
- Recipient company
- Zipton Labs
- Proposal award date
- 2012-02-20
- Contract end date
- 2012-11-19
- UEI
- EH1PNSRY6B74
- Solicitation number
- DE-FOA-0000577
- Topic code
- 33 c
Research abstract
Zipton Labs LLC will demonstrate the feasibility of avalanche photodiodes made from gallium phosphide grown on silicon virtual substrates. To increase material quality and decrease dark-current noise, gettering will be performed on the substrate and epilayer. The photodetectors will give superior UV quantum efficiencies to that of UV-sensitized silicon photodiodes at a price point much lower than other wider bandgap alternatives.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Tailored Density Rectangular Cluster Jets for Laser Plasma Accelerators
- Transceiver ASIC for 100Gbps Detector Data Link
- A Streaming Data Reduction Appliance for High Energy Physics based on FPGA Technology
- MiniRailguns for Fusion and HEDP
- Computational Determination of Diagnostic Signatures for Deleterious Effects in Liner Compression of Field Reversed Configurations
Research funding history
2 SBIR/STTR records share this UEI (2012). Reported award amounts total $250,000. Reported amounts are not federal obligations.
Phases: Phase I
Agencies: Department of Defense, Department of Energy