SBIR/STTR Research Award

Large-Area UV-Selective Silicon-Based Avalanche Photodiodes

Award identifier b3f23a6a28375a8510974b635358f3a5964aec182979c030727f487643a53ab5Awarding agency Department of Defense · Army

Award amount

$97,815

Program and phase

SBIR · Phase I

Award year

2011

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
Spire Corporation
Proposal award date
2011-07-21
Contract end date
Not reported
UEI
RG46KJGARZF4
Solicitation number
2011.1
Topic code
A11-033

Research abstract

This Phase I SBIR proposal aims to develop for the first time high efficiency large-area, low-noise UV avalanche photodiodes on silicon-on-insulator (SOI) structures. These devices will benefit from Spire"s patented technology to selectivity detect UV radiation with efficiency levels at greater than 80% while being relatively insensitive to longer visible and near infrared photons. Upon success demonstration of the feasibility of these devices in Phase I, Spire will optimize the design and process parameters and develop devices worthy of government and commercial application.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

429 SBIR/STTR records share this UEI (1983–2014). Reported award amounts total $73,907,551. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, National Science Foundation, Department of Energy, Department of Health and Human Services, Department of Commerce

Agency intelligence

Department of Defense

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