Heterogeneous Integration of Nanomembrane Based Photonic/Electronic Signal Processing Modules

ABSTRACT: Crystalline semiconductor nanomembranes (NMs) possess the electronic/photonic properties of bulk material, although they are flexible, deformable, and conformable. Semiconductor nanomembranes offer unique opportunities for novel active/ passive electronic, and photonic devices suitable for vertically stacked high-density photonic/electronic integration. Silicon-on-insulator substrates. SOI (SOI) provides, beyond its application in the Si industry, the ultimate platform for exploring novel science and technological advancements in this class of nanomaterial. Si-NM presents a viable crossover between silicon electronics/photonics and high-speed nanoelectronics in Si. In addition, NM technology provides the ability to stack device layers in 3D for high-density integration. However successful nanophotonic integration of various photonic devices fabricated in different material platforms must be CMOS compatible. This in particular has proven to be challenging in the case of integration of III-V based devices with their Si or polymer counterparts. We propose to use nanomembrane enabled heterogeneous integration technology to fabricate active and passive optoelectronic devices that are integrated on a variety of planar structures. Our approach takes advantage of the well established CMOS technology to meet the challenges for next generation photonics, microprocessors and computing systems as described by the International Technology Roadmap for Semiconductors. BENEFIT: The proposed technology will enable the possibilities to develop adaptive intelligent photonics and electronics devices and systems that are flexible, deformable, and conformable. Thus all manner of Si & III-V devices can be fabricated, and high-volume manufacturing is feasible. Of particular interest to various DoD programs are innovative approaches for the development of 1) flexible intelligent photonics (FIP): adaptive frequency selective photonic components, modulators, mechano-activated adaptive optics, 3D photonic crystals and membrane waveguides; 2) strain engineered ultrasensitive, high-speed Si-NM/GeNM photodetectors; 3) Si-membrane-based light sources; 4) high-speed flexible, conformal, and/or 3-D electronics; 5) hybrid-orientation technology (HOT): fast flexible CMOS with integration on other hosts; 6) flexible conformal photovoltaics - integrated personal portable power sources; or 7) Si-membrane based thermoelectric materials. Adaptive intelligent photonic/electronic systems, improved detectors and imagers, light sources, conformal electronics and power sources, and very fast flexible electronics would all be of great value to the DoD, significantly advancing DoD capabilities, with potential impacts in the areas of energy-efficient ultra-compact dynamic intelligent information collection, high-capacity data networks, and adaptive rapid-response systems. These areas were identified by the Air Force Research Laboratory (AFRL) among 13 critical technologies needed for realization of integrated Microsystems. Including System-on-a-Chip (SoC). AFRL also identified the most stringent needs for future space system microprocessors occur from intelligence, surveillance, and reconnaissance (ISR) missions. Therefore, both DoD space and missile programs and their research laboratories will benefit from the development of adaptive intelligent photonics and electronics nanomembrane based devices, designed and realized under the current program.