SBIR Phase I: A Novel Memory Having Both Volatile and Non-Volatile Modes For High Performance, Low Power Applications
Award amount
$150,000Program and phase
SBIR · Phase IAward year
2011Award details
- Awarding agency
- National Science Foundation
- Branch
- Not reported
- Recipient company
- Zeno Semiconductor, Inc.
- Proposal award date
- 2011-01-01
- Contract end date
- 2011-12-31
- UEI
- FXE7MZ52LEN5
- Solicitation number
- Not reported
- Topic code
- IC
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- SBIR Phase II: A Novel Memory Having Both Volatile and Non-Volatile Modes For High Performance, Low Power Applications
- SBIR Phase I: A Novel Semiconductor Memory Having Both Volatile and Non-Volatile Modes
Research funding history
3 SBIR/STTR records share this UEI (2009–2012). Reported award amounts total $736,721. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: National Science Foundation