SBIR/STTR Research Award

High Powered Laser Diodes for Pump Sources and other BMDS applications

Award identifier ba1b670762a04ea9e8547e3c50ee3e0fbd2a710d39c7e11d6a00716ea47b9d7bAwarding agency Department of Defense · Missile Defense Agency

Award amount

$99,991

Program and phase

SBIR · Phase I

Award year

2010

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Power Photonic
Proposal award date
2010-07-05
Contract end date
2011-01-04
UEI
SMX5KJLK2QR4
Solicitation number
2009.3
Topic code
MDA09-040

Research abstract

We propose the development of grating coupled surface emitting lasers (GCSELs) based on the GaSb material system. These lasers will operate in the continuous wave mode at temperatures well above room temperature and will offer higher power and efficiency as compared to any current technology. The use of GaSb based materials will insure good thermal stability, high efficiency, and high operating temperatures. These properties are a direct consequence of the effective carrier confinement for both electrons and holes available in this material system. These semiconductor materials developed in Phase I can be used in VICSELs, VECSELs, or GCSELs. Broad area multimode lasers and single spatial mode ridge lasers will be demonstrated in Phase I. We propose developing GCSELs based on these materials with high fill factor in a Phase II effort.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

11 SBIR/STTR records share this UEI (2004–2013). Reported award amounts total $4,817,125. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense

Agency intelligence

Department of Defense

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