SBIR/STTR Research Award

Integrated Broad Band Optical Calibration Sources for Star Simulation

Award identifier c026cb972761bb4db173ed77cc7d622a10ecac76e245736799258176fa07062cAwarding agency Department of Defense · Air Force

Award amount

$100,000

Program and phase

SBIR · Phase I

Award year

2010

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
Integrated Micro Sensors, Inc.
Proposal award date
2010-05-05
Contract end date
2011-02-05
UEI
HKDSBLXQQLL1
Solicitation number
2009.3
Topic code
AF093-218

Research abstract

Current calibration techniques do not permit pre-flight, in-flight, or real time calibration. The available optical calibration sources such as lamps and blackbody simulators are bulky, can be used only in laboratory conditions and require precise adjustments of the total flux, color, and spectral shape, accomplished by using filters, diaphragms, mirrors, lenses and software to perform complicated calculations to calibrate the data. The objective of this project is development, fabrication, and testing of miniature high-stability integrated super broadband optical emission sources for field and in-flight calibration of stellar photometers and spectrometers. In order to meet this objective we will utilize results in the area of Silicon Carbide and Si-based avalanche Light Emitting Diodes achieved by Integrated Micro Sensors Inc, in order to develop more efficient and mature devices of this type based on III nitride materials. This effort will be based on the new developments in III nitride materials growth, characterization, and processing accomplished by the Center for Advanced Materials (University of Houston). The high stability of the proposed devices in a wide temperature range, including cryogenic temperatures and vacuum environments, will be provided by employment of the avalanche electroluminescence process based on intra-band hot electron transitions. BENEFIT: High stability of the proposed devices in a wide temperature range, including cryogenic temperatures and vacuum environments, will be provided by employment of the avalanche electroluminescence process based on intra-band hot electron transitions. High performance and super-broad spectral range will result from implementation of improved quality more efficient direct bandgap materials and bandgap-engineered structures, as well as employment of advanced processing methods. The extended emission spectrum ranging from at most 280 nm to at least 1770 nm, will be achieved using broad-band emissions from tuned III nitride-based avalanche LED structures and their combinations, integrated on a single chip. Individual addressing of each LED in the structure will allow for spectral simulation of a large variation of different class stars.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

27 SBIR/STTR records share this UEI (2001–2013). Reported award amounts total $6,557,770. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation, Department of Health and Human Services

Agency intelligence

Department of Defense

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