Novel LWIR Detector Technology for high-yield, large format FPAs

EpiWorks will demonstrate an MOCVD capability to manufacture of GaSb/InAs strained layer superlattice (SLS) epitaxial wafers for 10um FPAs in a low-cost commercial, production environment. In our proposed effort EpiWorks would initially focus on duplicate state-of-the-art results that have been achieved to date in research labs using MBE growth. This would lay the groundwork for EpiWorks to continue to push performance, but also focus on developing a very high-yield, low defect density wafer technology necessary to produce extremely large format FPAs. The benefits to the Missile Defense Agency are clear: a commercially available, reliable, epitaxial technology for realizing next generation, large format FPAs from 5 um to 15 um. This would be realized by utilizing our leading edge production technology, including superior uniformity, sharp interface switching, high throughput and low defect densities.