Producibility of Gallium Nitride Semiconductor Materials

Inlustra Technologies and the University of Notre Dame propose a Phase I STTR program that, combined with a subsequent Phase II effort, will result in methods for the scalable production of semi-insulating non-polar GaN substrates. These substrates will be utilized in the fabrication of high-power/high-frequency AlGaN-GaN electronic devices capable of reliable operation under high thermal load. In Phase I, Inlustra will demonstrate the feasibility of reproducible doping conditions needed for the growth of semi-insulating non-polar (a-plane and m-plane) GaN boules. Concurrently, Notre Dame will perform detailed electrical characterization (for example, temperature-dependent Hall measurements) of Inlustra’s semi-insulating GaN material. These measurements will provide frequent feedback required for Inlustra’s GaN boule growth effort. The proposed program will lay a solid foundation for further work in Phase II, focusing on commercially practical growth of semi-insulating GaN boules and benefits for (Al,Ga)N high-power/high-frequency devices.