Type-II InAs/GaSb material development for two color focal plane arrays
Award amount
$99,804Program and phase
SBIR · Phase IAward year
2010Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- MP Technologies, LLC
- Proposal award date
- 2010-05-03
- Contract end date
- 2010-11-02
- UEI
- UHNEBSGY17T6
- Solicitation number
- 2009.3
- Topic code
- MDA09-013
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Ring-Cavity Surface-Emitting Quantum Cascade Laser Array
- High-performance 1024x1024 MWIR/LWIR Dual-band InAs/GaSb Type-II Superlattice-based Camera System
- Array Packaging of High Power, High Efficiency, Quantum Cascade Lasers
- III-Nitride Based High-Power 340 nm Lasers
- Surface Leakage Suppression in LWIR Type-II Superlattice Photodetectors Using Electrical Gating Technique
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High performance dual band LWIR/LWIR Focal Plane Arrays based on Type-II superlattice
- SLS Photodiodes Grown by MOCVD
- High-performance, cost-effective SLS arrays using conventional III-V processes
- High Performance Infrared Focal Plane Arrays with Advanced Quantum Structures
Research funding history
58 SBIR/STTR records share this UEI (2000–2015). Reported award amounts total $21,029,657. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration