SBIR/STTR Research Award
Transition Metal Oxide Optical Switch
Award amount
$70,000Program and phase
SBIR · Phase IAward year
2009Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- 4WAVE, INC.
- Proposal award date
- 2010-03-11
- Contract end date
- Not reported
- UEI
- RUJKM1TWGN88
- Solicitation number
- 2009.2
- Topic code
- A09-079
Research abstract
We propose to test a new sputtering method, Biased Target Deposition (BTD), for growth of polycrystalline VO2 thin films. The BTD method has been shown to be more stable and flexible for reactive deposition than previously used techniques, and we test whether VO2 can be driven into different microstructures, hence properties, by varying growth conditions. We focus on the optically-driven insulator-to-metal transition of VO2 when the material is grown on substrates transmissive to long-wavelength infrared (LWIR) radiation, commonly Ge, and seek to understand any observed optically-driven"imprint"aging of the material via microstructural characterization of the"aged"material.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-cost device relevant Indium Gallium Nitride (InGaN) or Alternatives
- Low Damage Ion Beam Etching Technique and Method for Compositional Profiling of Thin Multilayer Films
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
3 SBIR/STTR records share this UEI (2003–2009). Reported award amounts total $240,921. Reported amounts are not federal obligations.
Phases: Phase I
Agencies: Department of Defense, Department of Commerce